Home

The Neuro-Bit In Action

For a complete list of documentation about the Neuro-Bit,

please visit our Technical Documentation page.

download the Neuro-BIT Datasheet for complete specifications.

  • Nano-scale thin-film electrical resistor fabricated on a silicon wafer that has a memory

  • Varying resistance depending on the signal it is currently experiencing and all of the signals it has been exposed to in the past

  • Can be used in binary applications by quickly switching between high and low resistance states by "writing" and "erasing" with positive and negative voltages

  • Analog in nature and can be programmed to a variety of resistance states

  • Non-volatile behavior allows devices to retain their programmed state

The ion conducting memristor 

  •  First in our Neuro-Core line of adaptive intelligence products

  • Exhibits complex behavior by using dendrite growth to change the resistance state

  • Fully-reversible dendrite growth

  • To enable their use in complex integrated circuit designs, the Neuro-Bit is available as:

    • ​Single devices

    • Two-dimensional arrays

    • Integration into MOSIS C5 CMOS process

  • Available for fabrication into custom circuit designs 

Our Neuro-BitMemristor 

To see a list of available Neuro-Bit memristors,

please see our product page.

First theorized in 1971 by Leon Chua, a memristor, or "memory resistor", is an analog circuit element designed to exhibit varying resistance in order to "remember" the electrical signals it is experiencing, as well as the signals experienced in the past. This resistive memory allows circuits to emulate biological processes, such as the synapse, through artificial neural networking circuits.


These neuromorphic applications give rise to a new era of circuitry; one that is able to organically adapt, or specifically taught, in order to imitate biological processes in electronics. 

Neuro-Bit Memristor Specification Overview

  • Pre-programming resistance                      Greater than 50MΩ

  • ​Applied Voltage Range                              ±5V for Writes/Erases; 50mV Reads

  • Recommended Compliance                       30μA for Writes, 1mA for Erases/Reads

  • Write Switch Voltage                                  200mV - 500mV

  • Post-write resistance                                  500Ω - 100KΩ*

  • Erase Switch voltage                                  Less than (-)500mV

  • Post-erase resistance                                 800KΩ - 80MΩ

  • Write speed                                                Less than 5 nanoseconds​

  • Maximum cycles                                         Greater than 10 million**

Applications

Copyright © 2015 Bio Inspired Technologies LLC, All rights reserved. 

Resources

Services

*Varies based on applied voltage and compliance current levels

What are "memristors"?

Support

About

**May vary depending on level of testing stress​es on device

The dendrite in the memristor operates in nearly the exact way that the biological synapse operates, making it the ideal candidate for:


  • Circuits that emulate the behavior of the biological synapse

  • Synthetic neurons

  • Neuromorphic Circuits

  • Threshold logic and reconfigurable circuit applications​

  • Multi-level memory systems

  • Spike timing dependent plasticity experimentation

  • neural networks and weighted feedback systems

  • ​Adaptive intelligence and learning systems

  • ​tunable memristor based resistors, capacitors, and inductors

  • ​implementing inhibitory and excitatory responses in circuits​​​